ZB T 31009-1987 外锯齿锁紧垫圈
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基本信息
| 标准名称： | 外锯齿锁紧垫圈 |
| 中标分类： | 车辆 >> 车辆通用零部件 >> 紧固件 |
| 替代情况： | QC/T 332-1999;转化为JB 3661.2-84 |
| 发布日期： | |
| 实施日期： | 1991-01-01 |
| 首发日期： | |
| 作废日期： | |
| 出版日期： | |
| 页数： | 2页 |
适用范围
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前言
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目录
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引用标准
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所属分类： 车辆 车辆通用零部件 紧固件
下载地址: 点击此处下载
MIL-G-16491F, MILITARY SPECIFICATION: GROMMET, METALLIC, GENERAL SPECIFICATION FOR (1 MAY 1989) [S/S BY NASM16491]., This specification covers grommets with washers or rings for use with miscellaneous canvas and leather equipment.【英文标准名称】:StandardGuideforUseofanX-RayTester([approximate]10keVPhotons)inIonizingRadiationEffectsTestingofSemiconductorDevicesandMicrocircuits
【原文标准名称】:半导体器件和微电路的电离辐射效应试验中X射线测试仪(近似等于10keV辐射量子)的使用标准指南
【标准号】:ASTMF1467-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:微电子学;X射线仪;电子工程;试验设备
【英文主题词】:Collimator;Electricalconductors-semiconductors;Electronichardness;Experimentaldesign;Hardnesstests-radiation(ofsemiconductors);Ionizingradiation;Lowenergy([aprox]10keVphotons)X-raysources;Microcircuits;Microelectronicdevice
【摘要】:1.1ThisguidecoversrecommendedproceduresfortheuseofX-raytesters(thatis,sourceswithaphotonspectrumhaving[approximate]10keVmeanphotonenergyand[approximate]50keVmaximumenergy)intestingsemiconductordiscretedevicesandintegratedcircuitsforeffectsfromionizingradiation.1.2TheX-raytestermaybeappropriateforinvestigatingthesusceptibilityofwaferlevelordeliddedmicroelectronicdevicestoionizingradiationeffects.Itisnotappropriateforinvestigatingotherradiation-inducedeffectssuchassingle-eventeffects(SEE)oreffectsduetodisplacementdamage.1.3Thisguidefocusesonradiationeffectsinmetaloxidesilicon(MOS)circuitelements,eitherdesigned(asinMOStransistors)orparasitic(asinparasiticMOSelementsinbipolartransistors).1.4InformationisgivenaboutappropriatecomparisonofionizingradiationhardnessresultsobtainedwithanX-raytestertothoseresultsobtainedwithcobalt-60gammairradiation.Severaldifferencesinradiation-inducedeffectscausedbydifferencesinthephotonenergiesoftheX-rayandcobalt-60gammasourcesareevaluated.Quantitativeestimatesofthemagnitudeofthesedifferencesineffects,andotherfactorsthatshouldbeconsideredinsettinguptestprotocols,arepresented.1.5Ifa10-keVX-raytesteristobeusedforqualificationtestingorlotacceptancetesting,itisrecommendedthatsuchtestsbesupportedbycrosscheckingwithcobalt-60gammairradiations.1.6ComparisonsofionizingradiationhardnessresultsobtainedwithanX-raytesterwithresultsobtainedwithalinac,withprotons,etc.areoutsidethescopeofthisguide.1.7CurrentunderstandingofthedifferencesbetweenthephysicaleffectscausedbyX-rayandcobalt-60gammairradiationsisusedtoprovideanestimateoftheratio(number-of-holes-cobalt-60/(number-of-holes-X-ray).SeveralcasesaredefinedwherethedifferencesintheeffectscausedbyXraysandcobalt-60gammasareexpectedtobesmall.Othercaseswherethedifferencescouldpotentiallybeasgreatasafactoroffouraredescribed.1.8ItshouldberecognizedthatneitherX-raytestersnorcobalt-60gammasourceswillprovide,ingeneral,anaccuratesimulationofaspecifiedsystemradiationenvironment.Theuseofeithertestsourcewillrequireextrapolationtotheeffectstobeexpectedfromthespecifiedradiationenvironment.Inthisguide,wediscussthedifferencesbetweenX-raytesterandcobalt-60gammaeffects.Thisdiscussionshouldbeusefulasbackgroundtotheproblemofextrapolationtoeffectsexpectedfromadifferentradiationenvironment.However,theprocessofextrapolationtotheexpectedrealenvironmentistreatedelsewhere(1,2).1.9ThetimescaleofanX-rayirradiationandmeasurementmaybemuchdifferentthantheirradiationtimeintheexpecteddeviceapplication.Informationontime-dependenteffectsisgiven.1.10PossiblelateralspreadingofthecollimatedX-raybeambeyondthedesiredirradiatedregiononawaferisalsodiscussed.1.11Informationisgivenaboutrecommendedexperimentalmethodology,dosimetry,anddatainterpretation.1.12Radiationtestingofsemiconductordevicesmayproduceseveredegradationoftheelectricalparametersofirradiateddevicesandshouldthereforebeconsideredadestructivetest.1.13Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L04;N50
【国际标准分类号】:31_020
【页数】:18P.;A4
【正文语种】:
【原文标准名称】:半导体器件和微电路的电离辐射效应试验中X射线测试仪(近似等于10keV辐射量子)的使用标准指南
【标准号】:ASTMF1467-1999(2005)
【标准状态】:现行
【国别】:
【发布日期】:1999
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.11
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:微电子学;X射线仪;电子工程;试验设备
【英文主题词】:Collimator;Electricalconductors-semiconductors;Electronichardness;Experimentaldesign;Hardnesstests-radiation(ofsemiconductors);Ionizingradiation;Lowenergy([aprox]10keVphotons)X-raysources;Microcircuits;Microelectronicdevice
【摘要】:1.1ThisguidecoversrecommendedproceduresfortheuseofX-raytesters(thatis,sourceswithaphotonspectrumhaving[approximate]10keVmeanphotonenergyand[approximate]50keVmaximumenergy)intestingsemiconductordiscretedevicesandintegratedcircuitsforeffectsfromionizingradiation.1.2TheX-raytestermaybeappropriateforinvestigatingthesusceptibilityofwaferlevelordeliddedmicroelectronicdevicestoionizingradiationeffects.Itisnotappropriateforinvestigatingotherradiation-inducedeffectssuchassingle-eventeffects(SEE)oreffectsduetodisplacementdamage.1.3Thisguidefocusesonradiationeffectsinmetaloxidesilicon(MOS)circuitelements,eitherdesigned(asinMOStransistors)orparasitic(asinparasiticMOSelementsinbipolartransistors).1.4InformationisgivenaboutappropriatecomparisonofionizingradiationhardnessresultsobtainedwithanX-raytestertothoseresultsobtainedwithcobalt-60gammairradiation.Severaldifferencesinradiation-inducedeffectscausedbydifferencesinthephotonenergiesoftheX-rayandcobalt-60gammasourcesareevaluated.Quantitativeestimatesofthemagnitudeofthesedifferencesineffects,andotherfactorsthatshouldbeconsideredinsettinguptestprotocols,arepresented.1.5Ifa10-keVX-raytesteristobeusedforqualificationtestingorlotacceptancetesting,itisrecommendedthatsuchtestsbesupportedbycrosscheckingwithcobalt-60gammairradiations.1.6ComparisonsofionizingradiationhardnessresultsobtainedwithanX-raytesterwithresultsobtainedwithalinac,withprotons,etc.areoutsidethescopeofthisguide.1.7CurrentunderstandingofthedifferencesbetweenthephysicaleffectscausedbyX-rayandcobalt-60gammairradiationsisusedtoprovideanestimateoftheratio(number-of-holes-cobalt-60/(number-of-holes-X-ray).SeveralcasesaredefinedwherethedifferencesintheeffectscausedbyXraysandcobalt-60gammasareexpectedtobesmall.Othercaseswherethedifferencescouldpotentiallybeasgreatasafactoroffouraredescribed.1.8ItshouldberecognizedthatneitherX-raytestersnorcobalt-60gammasourceswillprovide,ingeneral,anaccuratesimulationofaspecifiedsystemradiationenvironment.Theuseofeithertestsourcewillrequireextrapolationtotheeffectstobeexpectedfromthespecifiedradiationenvironment.Inthisguide,wediscussthedifferencesbetweenX-raytesterandcobalt-60gammaeffects.Thisdiscussionshouldbeusefulasbackgroundtotheproblemofextrapolationtoeffectsexpectedfromadifferentradiationenvironment.However,theprocessofextrapolationtotheexpectedrealenvironmentistreatedelsewhere(1,2).1.9ThetimescaleofanX-rayirradiationandmeasurementmaybemuchdifferentthantheirradiationtimeintheexpecteddeviceapplication.Informationontime-dependenteffectsisgiven.1.10PossiblelateralspreadingofthecollimatedX-raybeambeyondthedesiredirradiatedregiononawaferisalsodiscussed.1.11Informationisgivenaboutrecommendedexperimentalmethodology,dosimetry,anddatainterpretation.1.12Radiationtestingofsemiconductordevicesmayproduceseveredegradationoftheelectricalparametersofirradiateddevicesandshouldthereforebeconsideredadestructivetest.1.13Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.
【中国标准分类号】:L04;N50
【国际标准分类号】:31_020
【页数】:18P.;A4
【正文语种】:
